Anybody here working in the semiconductor industry dealing with epitaxy process growth? I accepted a job offer in a large foundry as an EPI Process Engineer. Any key points to look out for while in the job?
So from my understanding we apply molecules to a substrate and allow them to grow to create films or layers of atoms in ultra high vacuums. Say we want to create GaAs do we simply allow a single layer of Ga to nucleate at the surface then apply a single layer of As. Do they align in their lattice structure all on their own to create such a material on the surface.? what about more complex semiconductors?
I'm mostly a little confused in with the wording in section 4.2 describing the growth rate of a monolayer in this article https://lase.mer.utexas.edu/mbe.php
I am a graduate student in electrical engineering (USA), in a solid state research lab, specifically molecular beam epitaxy. I have chosen to stay awake for a 24 hr epitaxy experiment, the second time in four days. I am a bit over halfway done, AMA.
Also why is the electron gun necessary?
Thanks for your attention.
It's the Drama CD that covers an alternate worldline where Kurisu doesn't die and Maho comes to find her in Japan. Here's the first part: https://www.youtube.com/watch?v=bF-13Pfn1Hw
There's decently well translated summary on wikipedia. Wondering why there isn't a fan translation yet.
